Organic light-emitting display apparatus and method of manufacturing the same

ABSTRACT

In an aspect, an organic light-emitting display apparatus and a method of manufacturing the same are provided. The organic light-emitting display apparatus may include a substrate; a display unit formed on the substrate; and a thin film encapsulating layer encapsulating the display unit. The thin film encapsulating layer may include a plurality of organic layers and inorganic layers that are laminated alternately. At least one of the plurality of the inorganic films may include a first layer formed of a first material, a second layer formed of a second material other than the first material, and an intermediate layer provided between the first and second layers.

INCORPORATION BY REFERENCE TO RELATED APPLICATIONS

Any and all priority claims identified in the Application Data Sheet, orany correction thereto, are hereby incorporated by reference under 37CFR 1.57. For example, this application is a divisional of and claimspriority to U.S. application Ser. No. 13/962,855, filed Aug. 8, 2013which claims priority to and the benefit of Korean Patent ApplicationNo. 10-2013-0036442, filed on Apr. 3, 2013, in the Korean IntellectualProperty Office, the disclosure of which is incorporated herein in itsentirety by reference.

BACKGROUND

1. Field

This disclosure relates to an organic light-emitting display apparatusand a method of manufacturing the same, and more particularly, to anorganic light-emitting display apparatus including an improvedencapsulating layer and a method of manufacturing the organiclight-emitting display apparatus.

2. Description of the Related Technology

An organic light-emitting display apparatus includes a hole injectingelectrode, an electron injecting electrode, and an organiclight-emitting device (OLED) including an organic light-emitting layerformed between the hole injecting electrode and electron injectingelectrode. Generally, an organic light-emitting display apparatus is aself-luminescent display device, in which holes injected using the holeinjecting electrode and electrons injected using the electron injectingelectrode are combined in the organic light-emitting layer to generatean exciton, and then, the exciton falls from an excited state to aground state and generates light.

An organic light-emitting display apparatus does not require a separatelight source. Therefore, the organic light-emitting display apparatusmay be operated using low voltage, be lightweight and thin, and providehigh-quality features such as a wide viewing angle, high contrast andfast response speed. Thus, an organic light-emitting display apparatusreceives consideration as a next-generation display apparatus. However,the organic light-emitting display apparatus may be degraded due toexternal moisture or oxygen, and the like. Typically, the organiclight-emitting device must be encapsulated to protect the OLED fromexternal moisture or oxygen, and the like.

SUMMARY

The present disclosure provides an organic light-emitting apparatusincluding an improved moisture-proof encapsulating layer and a method ofmanufacturing of the organic light-emitting apparatus.

According to an aspect of the present disclosure, there is provided anorganic light-emitting display apparatus including a substrate; adisplay unit formed on the substrate; and a thin film encapsulatinglayer encapsulating the display unit; in which the thin filmencapsulating layer includes a plurality of organic layers and inorganiclayers that are alternately laminated thereon; in which at least one ofthe plurality of the inorganic layers includes a first layer formed of afirst material, a second layer formed of a second material other thanthe first material, and an intermediate layer provided between the firstand second layers; in which the intermediate layer comprises the firstand second materials.

In some embodiments, the first, intermediate, and second layers may besequentially laminated, and repeatedly laminated multiple times.

In some embodiments, the first material may be silicon oxide and thesecond material may be aluminum oxide.

In some embodiments, a thickness of the intermediate layer may rangefrom about 50 Å to about 200 Å.

In some embodiments, a thickness of the first and second layers mayrange from about 100 Å to about 500 Å.

In some embodiments, a thickness of the first and second layers mayrange from about 100 Å to about 200 Å.

In some embodiments, areas of the inorganic layers may be larger thanthe areas of the organic layers. In some embodiments, at least oneorganic layer includes polyurea or polyacrylate. In some embodiments,the plurality of organic layers include polyurea or polyacrylate.

According to another aspect of the present disclosure, there is provideda method of manufacturing an organic light-emitting display apparatus,the method including forming a display unit on a substrate; andalternately laminating an organic layer and an inorganic layer on thedisplay unit; in which the forming of the inorganic layer includesforming a first layer; performing plasma treatment on a surface of thefirst layer; forming an intermediate layer on the plasma treated layer;and forming a second layer on the intermediate layer. In someembodiments, the organic layer includes polyurea or polyacrylate.

In some embodiments, the first layer may be formed of a first material,the second layer may be formed of a second material other than the firstmaterial, and the intermediate layer may be formed of a material thatincludes the first and second materials.

In some embodiments, the first material may be silicon oxide and thesecond material may be aluminum oxide.

In some embodiments, the first, intermediate, and second layers may beformed by using atomic layer deposition (ALD).

In some embodiments, a thickness of the intermediate layer may rangefrom about 50 Å to about 200 Å.

In some embodiments, a thickness of the intermediate layer may rangefrom about 50 Å to about 100 Å.

In some embodiments, a thickness of the first and second layers mayrange from about 100 Å to about 500 Å.

In some embodiments, a thickness of the first and second layers mayrange from about 100 Å to about 200 Å.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of the present disclosurewill become more apparent by describing in detail exemplary embodimentsthereof with reference to the attached drawings in which:

FIG. 1 is a cross-sectional view illustrating an organic light-emittingdisplay apparatus according to an embodiment;

FIG. 2 is a magnified view of a portion of a display unit of the organiclight-emitting display apparatus of FIG. 1; and

FIGS. 3 and 4 are magnified views illustrating structures of aninorganic film of the organic light-emitting display apparatus of FIG.1.

DETAILED DESCRIPTION

The present disclosure should not be construed as limited to theembodiments set forth herein; rather, these embodiments are provided sothat this disclosure will be thorough and complete. In the description,if it is determined that a detailed description of commonly-usedtechnologies or structures related to the embodiments mayunintentionally obscure the subject matter of the embodiments, thedetailed description thereof will be omitted.

It will be understood that although the terms first and second are usedherein to describe various elements, these elements should not belimited by these terms. These terms are only used to distinguish oneelement from another element.

It will be understood that when an element or layer is referred to asbeing “on” another element or layer, the element or layer can bedirectly on another element or layer or intervening elements or layers.

Hereinafter, embodiment of the present disclosure will be described morefully with reference to the accompanying drawings, in which illustrativeembodiments of the disclosure are shown. Like reference numerals in thedrawings denote like elements, and thus their description will beomitted. In the drawings, the thicknesses of layers and regions may beexaggerated for the convenience of description.

As used herein, the term “and/or” includes any and all combinations ofone or more of the associated listed items.

FIG. 1 is a cross-sectional view illustrating an organic light-emittingdisplay apparatus 10 according to an embodiment of the presentinvention. FIG. 2 is a magnified view of a portion of a display unit 200of the organic light-emitting display apparatus 10 of FIG. 1.

Referring FIGS. 1 and 2, the organic light-emitting display apparatus 10may include a substrate 100, a display unit 200 formed on the substrate100, and an encapsulating layer 300 encapsulating the display unit 200.

In some embodiments, the substrate 100 may be flexible, and formed ofplastic having high heat resistance and high durability such aspolyimide, polyethylene terephthalate (PET), polycarbonate, polyethylenenaphthalate, polyarylate (PAR), polyetherimide. However, the presentembodiments are not limited thereto, and the substrate 100 may be formedof various materials such as metal or glass.

In some embodiments, the display unit 200 may include a thin filmtransistor (TFT) layer 200 a which is an organic thin film transistor(OTFT) and a pixel unit 200 b. In some embodiments, the pixel unit 200 bmay be an organic light-emitting device (OLED). Hereinafter, the displayunit 200 will be described in more detail with reference to FIG. 2.

In some embodiments, a buffer layer 212 may be formed on the substrate100. In some embodiments, the buffer layer 212 which may function toblock impurities from penetrating through the substrate 100, andplanarize a top surface of the substrate 100 may be formed of variousmaterials for performing the functions.

For example, the buffer layer 212 may include an inorganic material suchas silicon oxide, silicon oxynitride, aluminum oxide, aluminum nitride,titanium oxide, or titanium nitride, or an organic material such aspolyimide, polyester, or acryl. In some embodiments, the buffer layer212 may be formed as a plurality of laminates using the materialsdescribed above.

In some embodiments, the thin film transistor (TFT) layer 200 a may beformed on the buffer layer 212. A top-gate type TFT is provided as anexample of the TFT layer 200 a in the present embodiments. However,other types of TFTs may be provided.

In some embodiments, the TFT layer 200 a may include an active layer221, a gate electrode 222, and source and drain electrodes 223.

In some embodiments, the active layer 221 may be formed on the bufferlayer 212 by using a semiconductor material. In some embodiments, a gateinsulating layer 213 may be formed to cover the active layer 221. Insome embodiments, the active layer 221 may be formed using an inorganicsemiconductor such as amorphous silicon or polysilicon, or an organicsemiconductor, and may include a source region and a drain region, and achannel region between the source and drain regions. In someembodiments, the gate insulating layer 213 may be present to insulatethe active layer 221 and the gate electrode 222, and may be formed of anorganic material, or an inorganic material such as SiNx, or SiO₂.

In some embodiments, the gate electrode 222 may be provided on the gateinsulating layer 213, and an interlayer insulating layer 214 may beformed to cover the gate electrode 222.

In some embodiments, the gate electrode 222 may include gold (Au),silver (Ag), copper (Cu), nickel (Ni), platinum (Pt), palladium (Pd),aluminum (Al), molybdenum (Mo), or an alloy such as a Al—Nd alloy, aMo—W alloy. However, the gate electrode 222 is not limited thereto, andmay include various materials in consideration of the manufacturingconditions of the organic light-emitting display apparatus 10.

In some embodiments, the interlayer insulating layer 214 may be providedbetween the gate electrode 222 and the source and drain electrodes 223,to insulate the gate electrode 222 and the source and drain electrodes223. The interlayer insulating layer 214 may be formed of an inorganicmaterial such as SiNx, SiO₂.

In some embodiments, the source and drain electrodes 223 may be formedon the interlayer insulating layer 214. In some embodiments, theinterlayer insulating layer 214 and the gate insulating layer 213 may beformed to expose the source and drain regions of the active layer 221.In some embodiments, the source and drain electrodes 223 may be formedto touch the exposed source and drain regions of the active layer 221.

FIG. 2 illustrates an example of the top-gate type TFT, whichsequentially includes the active layer 221, the gate electrode 222, andthe source and drain electrodes 223. However, the present embodimentsare not limited thereto. In some embodiments, the gate electrode 222 maybe provided under the active layer 221.

In some embodiments, the TFT layer 200 a as described above may beelectrically connected to the pixel unit 200 b and may operate the pixelunit 200 b, and may be covered with a planarization layer 215 whichprotects the TFT layer 200 a.

In some embodiments, the planarization layer 215 may be an inorganicinsulating layer and/or an organic insulating layer. In someembodiments, the inorganic insulating layer may include SiO₂, SiNx,SiON, Al₂O₃, TiO₂, Ta₂O₅, ZrO₂, BST, or PZT. In some embodiments, theorganic insulating layer may include a general purpose polymer (e.g.,poly(methyl methacrylate) (PMMA) or polystyrene (PS)), a polymerderivative including a phenol-based group, an acryl-based polymer, anarylether-based polymer, an amide-based polymer, a fluorine-basedpolymer, a p-xylene-based polymer, a vinyl alcohol-based polymer, or acompound thereof. In some embodiments, the planarization layer 215 maybe a composite laminate formed of the inorganic and organic layers.

In some embodiments, the pixel unit 200 b may be formed on theplanarization layer 215. In some embodiments, the pixel unit 200 b mayinclude a pixel electrode 231, an intermediate layer 232, and anopposite electrode 233.

In some embodiments, the pixel electrode 231 may be formed on theplanarization layer 215, and electrically connected to the source anddrain electrodes 223 through a contact hole 230 formed in theplanarization layer 215.

In some embodiments, the pixel electrode 231 may be a reflectiveelectrode, and may include a reflecting layer formed of Ag, magnesium(Mg), Al, Pt, Pd, Au, Ni, neodymium (Nd), iridium (Jr), chromium (Cr),or a compound thereof, and a transparent or semitransparent electrodelayer formed on the reflecting layer. The transparent or semitransparentelectrode layer may include at least one selected from the groupconsisting of indium tin oxide (ITO), indium zinc oxide (IZO), zincoxide (ZnO), indium oxide (In₂O₃), and indium gallium oxide (IGO).

In some embodiments, the opposite electrode 233 may be provided to facethe pixel electrode 231. In some embodiments, the opposite electrode 233may be a transparent or semitransparent electrode, and formed of a metalthin film having a low work function which includes lithium (Li),calcium (Ca), LiF/Ca, LiF/Al, Al, Ag, Mg, or a compound thereof. In someembodiments, an auxiliary electrode layer or a bus electrode may befurther formed on the metal thin film by using a material for forming atransparent electrode such as ITO, IZO, ZnO, or In₂O₃.

Therefore, the opposite electrode 233 may transmit therethrough lightemitted from an organic light-emitting layer included in theintermediate layer 232. That is, the light emitted from the organiclight-emitting layer may be reflected directly or by the pixel electrode231 which is a reflective electrode, toward the opposite electrode 233.

However, the organic light-emitting display apparatus 10 according tothe present embodiments is not limited to a top-emission type, but maybe a bottom-emission type in which the light emitted from the organiclight-emitting layer is emitted toward the substrate 100. In this case,the pixel electrode 231 may be a transparent or semitransparentelectrode, and the opposite electrode 233 may be a reflective electrode.Also, the organic light-emitting display apparatus 10 according to thepresent embodiment may be a both emission type in which the light isemitted from both top and bottom.

In some embodiments, a pixel defining layer 216 may be formed on thepixel electrode 231 by using an insulating material. In someembodiments, the pixel defining layer 216 exposes a predetermined areaof the pixel electrode 231. In some embodiments, the intermediate layer232 which includes the organic light-emitting layer is provided in theexposed area.

In some embodiments, the organic light-emitting layer may be formed of alow molecular weight organic material or a high molecular weight organicmaterial. In addition to the organic light-emitting layer, theintermediate layer 232 may selectively further include a functionallayer such as a hole transport layer (HTL), a hole injection layer(HIL), an electron transport layer (ETL), or an electron injection layer(EIL).

Referring back to FIG. 1, the encapsulating layer 300 encapsulates thedisplay unit 200 to protect the display unit 200 from external moistureor oxygen and thus prevent the display unit 200 from being degraded. Insome embodiments, the encapsulating layer 300 may include a plurality oforganic layers 310 or inorganic layers 320 that are alternatelylaminated.

Also, although not illustrated in FIG. 1, a protective layer (not shown)including a capping layer (not shown) may be further provided on theopposite electrode 233. The capping layer may be formed of an organicmaterial such as a-NPD, NPB, TPD, m-MTDATA, Alq3, or CuPc. In someembodiments, the capping layer may not only protect the OLED, but alsosupport efficient light-emission of the OLED.

In some embodiments, the organic layer 310 reduces internal stress ofthe inorganic layer 320 and fills in tiny cracks and pin holes formed inthe inorganic layer 320 to effectively protect the display unit 200 fromexternal moisture or oxygen. In some embodiments, the organic layer 310may be formed of a flexible organic material such as polyurea orpolyacrylate, but is not limited thereto.

In some embodiments, the inorganic layer 320 may be formed of aninorganic material having improved moistureproof ability to protect thedisplay unit 200 from external moisture or oxygen. In some embodiments,the inorganic layer 320 may be formed of SiNx, Al₂O₃, SiO₂, or TiO₂, butis not limited thereto.

In some embodiments, the area of the inorganic layer 320 may be greaterthan the area of the organic layer 310 to surround the organic layer310. Therefore, an outer portion of the encapsulating layer 300 includesthe inorganic layer 320 which is moistureproof, and an inner portionthereof includes the organic layer 310 which is vulnerable to moisture,but flexible. Thus, the encapsulating layer 300 which is flexible andmoistureproof may be embodied.

In some embodiments, the, at least one of the plurality of inorganiclayers 320 may include a first layer 322, a second layer 342, and anintermediate layer 326 displaced between the first and second layers 322and 324. In some embodiments, the encapsulating layer 300 may be furtherimproved in blocking external moisture, which will be described indetail with reference to FIG. 3.

FIGS. 3 and 4 are magnified views illustrating structures of aninorganic film of the organic light-emitting display apparatus 10 ofFIG. 1. Hereinafter, FIGS. 3 and 4 will be described with reference toFIG. 1.

First, referring to FIG. 3, at least one of the plurality of inorganiclayers 320 may include the first layer 322, the second layer 324, andthe intermediate layer 326. In some embodiments, the intermediate layer326 may be disposed between the first and second layers 322 and 324. Insome embodiments, the first layer 322, the intermediate layer 326, andthe second layer 324 are sequentially laminated.

In some embodiments, the first layer 322 may include a first material,and the second layer 324 may include a second material other than thefirst material. In some embodiments, the intermediate layer 326 mayinclude both the first and second materials.

For example, the first material may be silicon oxide, and the secondmaterial may be aluminium oxide. Silicon oxide and aluminium oxide areboth excellent moistureproof materials. However, if the inorganic layer320 is formed of only silicon oxide or aluminium oxide, the inorganiclayer 320 may be formed to be a single layer, and thus, a thickness ofthe inorganic layer 320 has to increase to protect the display unit 200from external moisture or oxygen. If the thickness of the inorganiclayer 320 increases, layer stress of the inorganic layer 320 alsoincreases. Therefore, the inorganic layer 320 may be delaminated, andexternal moisture or oxygen may be permeated into the OLED.

However, according to an aspect of the present embodiments, theinorganic layer 320 may include the first and second layers 322 and 324.Therefore, the layer stress in each of the first and second layers 322and 324 may be reduced. In some embodiments, the inorganic layer 320 maynot be delaminated since the layer stress in the entire inorganic layer320 may be reduced.

In some embodiments, since the first layer 322 may be formed of siliconoxide and the second layer 324 may be formed of aluminium oxide, theinorganic layer 320 may include the features of both silicon oxide andaluminium oxide. In addition, the first and second layers 322 and 324may make up for defects such as pin holes therein. In some embodiments,the display unit 200 may be effectively protected from external moistureor oxygen, and the thickness of the inorganic layer 320 may be reduced.Therefore, the manufacturing yield of the organic light-emitting displayapparatus 10 may be increased.

In some embodiments, the intermediate layer 326 may be formed of boththe first and second materials. Therefore, the first and second layers322 and 324, which are formed of different materials and thus havedifferent crystalline structures, may be more firmly bonded. Forexample, the intermediate layer 326 may be formed of silicon oxide inwhich a portion of oxygen is activated and combined with aluminium.

In some embodiments, a thickness of the intermediate layer 326 asdescribed above may range from about 50 Å to about 200 Å, andpreferably, from about 50 Å to about 100 Å.

If the thickness of the intermediate layer 326 is less than about 50 Å,an adhesive force between the first and second layers 322 and 324 may beweak. As will be described below, first, plasma treatment is performedon the first layer 322, and then the intermediate layer 326 is formed.If the thickness of the intermediate layer 326 is larger than about 200Å, the plasma treatment will be performed excessively on the first layer322 and thus damage the first layer 322. Therefore, the thickness of theintermediate layer 326 being less than about 200 Å is preferable.

In some embodiments, the intermediate layer 326 may be formed by usingatomic layer deposition (ALD). Thus, to reduce manufacturing hours andincrease yields, the thickness of the intermediate layer 326 maypreferably range from about 50 Å to about 100 Å. If the thickness of theintermediate layer 326 ranges from about 50 Å to about 100 Å, the firstand second layers 322 and 324 may be more securely bonded to each otherand stress of the inorganic layer 320 may be reduced.

Thicknesses of the first and second layers 322 and 324 may range fromabout 100 Å to about 500 Å, and preferably, from about 100 Å to 200 Å.In some embodiments thicknesses of the first and second layer 322 and324 may be different from each other.

If the thicknesses of the first and second layers 322 and 324 are lessthan 100 Å, external oxygen and moisture may be relatively easier to bepermeated through the intermediate layer 326. However, if thethicknesses of the first and second layers 322 and 324 are larger thanabout 500 Å, layer stress may occur in the first and second layers 322and 324 and thus, cracks may appear thereon.

Meanwhile, as will be described below, the first and second layers 322and 324 may be formed by using ALD. Thus, to reduce manufacturing hoursand increase yields, the thicknesses first and second layers 322 and 324may range from about 100 Å to about 200 Å.

FIG. 4 illustrates an example where the first, intermediate, and secondlayers 322, 326, and 324 are repeatedly laminated two times.

As in FIG. 4, if the first, intermediate, and second layers 322, 326,and 324 are repeatedly laminated, thicknesses of the first,intermediate, and second layers 322, 326, and 324 may be reduced. Assuch, if the thicknesses of the first, intermediate, and second layers322, 326, and 324 that form the inorganic layer 320 are thin andalternately laminated, cracks may not appear on the inorganic layer 320,and an effective barrier which protects the display unit 200 fromexternal moisture or oxygen may be formed.

Although an example where the first, intermediate, and second layers322, 326, and 324 are repeatedly laminated two times is illustrated inFIG. 4, the present invention is not limited thereto. In someembodiments, the first, intermediate, and second layers 322, 326, and324 may be repeatedly laminated three or more times.

Hereinafter, a method of manufacturing the organic light-emittingdisplay apparatus 10 will be described in detail with reference to FIGS.1 and 3.

In some embodiments, the method of manufacturing the organiclight-emitting display apparatus 10 may include forming the display unit200 on the substrate 100, and forming the encapsulating layer 300encapsulating the display unit 200.

In some embodiments, the display unit 200 may not only have a structureof FIG. 2, but also be any of various organic light-emitting displaysthat are publicly known. Thus, detailed description thereof will beomitted.

Although not shown in the drawings, before forming the encapsulatinglayer 300, the passivation layer may be formed on the display unit 200.In some embodiments, the passivation layer may include the capping layerwhich may be formed of an organic material such as a-NPD, NPB, TPD,m-MTDATA, Alq3, or CuPc.

In some embodiments, the organic and inorganic layers 310 and 320 may bealternately laminated on the display unit 200 to form the encapsulatinglayer 300.

In some embodiments, the organic layer 310 may be formed to apredetermined thickness of, for example, about 30000 Å to smooth a leveldifference due to the pixel defining layer 216. In some embodiments, theorganic layer 310 may be formed by evaporating and depositing a liquidmonomer, and then radiating ultraviolet rays to the liquid monomer topolymerize the liquid monomer as a polymer.

In some embodiments, a method of manufacturing the inorganic layer 320may include forming the first layer 322, performing the plasma treatmenton a surface of the first layer 322, forming the intermediate layer 326on the plasma treated first layer 322, and forming the second layer 324on the intermediate layer 326.

In some embodiments, the first layer 322 may be a silicon oxide layer,and may be formed by using ALD.

ALD is a method including injecting a raw gas to a substrate, performinga purging and pumping process to thus adsorb a single molecular layer ormultiple molecular layers of the raw gas onto the substrate, and then,adsorbing another raw gas, and performing the purging and pumpingprocess to form a desirable single atomic layer of or multiple atomiclayers of the raw gas. When using the ALD, a thickness of the substratemay be adjusted in units of atoms, and a density of the pin holes in athin film formed using the ALD is very low, but a density of the thinfilm is high.

For example, the first layer 322 may be formed by injecting a raw gasSiH₂Cl₃ to the substrate 100 on which the display unit 200 is formed,performing the purging and pumping process, injecting a reaction gasincluding oxygen radicals, and performing the purging and pumpingprocess.

In some embodiments, the intermediate layer 326 may be formed byexposing the first layer 322 to hydrogen plasma to thus increasereaction between oxygen and a silicon oxide layer, activating thesurface of the first layer 322, and depositing aluminium on the firstlayer 322

Using the ALD, the intermediate layer 326 may be formed by injecting agas including Al atoms, such as trimethyl aluminium (TMA), onto thefirst layer 322 whose surface is activated.

In some embodiments, the second layer 324 may be an aluminium oxidelayer, and be formed by using the ALD.

For example, the second layer 324 may be formed by injecting a raw gasTMA to the intermediate layer 326, performing the purging and pumpingprocess, injecting a reaction gas including oxygen radicals, andperforming the purging and pumping process.

In some embodiments, the inorganic layer 320 may be formed by repeatedlylaminating the first, intermediate, and second layers 322, 326, and 324.

According to the one or more embodiments of the present disclosure, anencapsulating layer having improved moisture proof ability may beprovided. Also, since thicknesses of inorganic layers of theencapsulating layer may be reduced, the manufacturing yield of anorganic light-emitting display apparatus may be improved.

While the present disclosure has been particularly shown and describedwith reference to exemplary embodiments thereof, it will be understoodby those of ordinary skill in the art that various changes in form anddetails may be made therein without departing from the spirit and scopeof the claims.

What is claimed is:
 1. A method of manufacturing an organiclight-emitting display apparatus, the method comprising: forming adisplay unit on a substrate; and alternately laminating an organic layerand an inorganic layer on the display unit; wherein the forming of theinorganic layer comprises: forming a first layer; performing plasmatreatment on a surface of the first layer; forming an intermediate layeron the plasma treated layer; and forming a second layer on theintermediate layer.
 2. The method of claim 1, wherein the first layer isformed of a first material, the second layer is formed of a secondmaterial other than the first material, and the intermediate layer isformed of a material that comprises the first and second materials. 3.The method of claim 2, wherein the first material is silicon oxide andthe second material is aluminum oxide.
 4. The method of claim 1, whereinthe first, intermediate, and second layers are formed by using atomiclayer deposition (ALD).
 5. The method of claim 1, wherein a thickness ofthe intermediate layer ranges from about 50 Å to about 200 Å.
 6. Themethod of claim 3, wherein a thickness of the intermediate layer rangesfrom about 50 Å to about 100 Å.
 7. The method of claim 1, wherein athickness of the first and second layers ranges from about 100 Å toabout 500 Å.
 8. The method of claim 7, wherein a thickness of the firstand second layers ranges from about 100 Å to about 200 Å.
 9. The methodof claim 1, wherein the organic layer comprises polyurea orpolyacrylate.